Magnetic Tunnel Junction Builder

Table of Contents

General Description

[Important] Important

In order to use the Magnetic Tunnel Junction Builder, it is necessary to have a special license. This can only be obtained by being part of the Magneto-resistive Storage and Memory Consortium (MSMC). For further information regarding the consortium as well as license issues, please email sales@quantumwise.com.

The Magnetic Tunnel Junction Builder is in many aspects similar to the Atomic Manipulator tool, but instead of being a general tool for building and manipulating two-probe systems, the MTJ Builder is used exclusively for building magnetic tunnel junctions. These systems are special two-probe systems where the electrodes consist of a magnetic metal, often Fe or Co, and a barrier region consisting of a thin layer of an insulating metal oxide such as MgO.

With the MTJ Builder, you design and construct your system by defining the following properties

  • The electrode material

  • The number of layers for the electrode bulk and the surface atoms.

  • The insulating barrier region material.

  • The number of layers in the barrier region.

You can also manipulate most atomic positions by changing inter-plane distances such as

  • The electrode lattice constant.

  • The distance between the electrode surface and the barrier region.

  • The distance between the last and second-last electrode surface layer.

  • The buckling in the insulating barrier region.

  • The individual layer separation of the barrier-region layers.

[Note] Note

If you want to manipulate your system further, e.g. creating defects, you should create your basic system with the MTJ Builder, and then import the configuration into the Atomic Manipulator and do further edits there (or edit the configuration file by hand).

Using the Magnetic Tunnel Junction Builder

Start the MTJ builder by double-clicking the icon in the VNL Toolbar. The MTJ Builder opens displaying a window dialog as shown in Figure 37. If this is the first time you launch the MTJ Builder, the dialog is showing a default setup for a Fe-MgO-Fe system.

[Note] Note

Similar to most other VNL tools, the MTJ Builder loads its state prior to its last exit, so the content of Figure 37 may look different if you have used the tool before.

Using the default Fe-MgO-Fe magnetic tunnel junction as a template, it is easy to customize your system by changing the materials and any of the geometric parameters displayed in the left panel. In this section, we will only use the most basic features of the MTJ Builder. A comprehensive list of the features can be found in the parameter list.

[Important] Important

To view the changes to your system in the 3D-View, either left-click the Show button or press Alt-S.

The window of the Magnetic Tunnel Junction Builder tool.

Figure 37: The window of the Magnetic Tunnel Junction Builder tool.


Changing the electrode

In the Electrodes input section of the MTJ Builder (the upper frame to the left of the 3D-View in Figure 37), you specify parameters that refers to the electrode. For instance, here you can change the electrode material from Fe to Co by selecting Co from the Material drop-down list. After you have changed the electrode material, you should also change the value of the lattice constant to describe the electrodes correctly. For this particular example, the Lattice constant of Co should be equal to 2.51.

Similar to regular two-probe systems built with the Atomic Manipulator, for magnetic tunnel junctions it is also important to include layers of surface atoms between the bulk electrode and the insulator oxide. These atoms are necessary to screen out the perturbation from the insulator region on the electrode surface, in order for the remaining electrode to be treated as a bulk without compromising the physical description. The number of surface layers are changed in the Left surface and Right surface spin boxes in the Surface layers input section. As with regular two-probe systems, the recommended approach is to choose a moderate value and increase it systematically until your result converges.

Changing the barrier region

In the Barrier input section, you specify the insulating material and atomic positions of the central region. Similar to the electrode material, you can change the barrier-region material from MgO to ZrO by selecting ZrO from the Material drop-down list. You can also vary the thickness of the barrier region by choosing the number of layers between the electrodes. If you left-click the Layer separations, you are presented with a window where you can specify the individual separations between each insulator layer.

Changing the structure of the interface

For the Fe-MgO-Fe system, the geometry “deformation” of the electrode and insulator surfaces due to the misfit between these regions is comparatively small; the distance between the last and second-last electrode surface layers is compressed by 2%, and the first layer of Mg atoms extends 0.05 Å towards the electrode. In order to adjust for that, you need to change the Inner layer separation from 1.433 to 1.40, and the interface Buckling from 0.00 to 0.05. Finally, you can also adjust the gap between the electrode surface and the barrier region by changing the Electrode/Oxygen distance to make space for atoms of various sizes.

[Note] Note

Even though the interface deformation is comparatively small in Fe-MgO-Fe, you should keep in mind that both of these values may be very different from what is given here — especially if the insulating barrier region is thin and contains atoms of very different size. Therefore, it is always recommended to optimize the structure or at least vary the parameters to see how it affects your results.

Together, the Inner layer separation and the Electrode/Oxygen distance can also be used to set the position and size of the outermost surface layer. This kind of control can be very useful if you wish to study systems where the electrode surfaces, for instance, have been coated with a layer of Ag atoms. In this case, however, you need to change the element to Ag either by hand or import the configuration into the Atomic Manipulator.

When you are satisfied with your magnetic tunnel junction setup you can either

If you on the other hand are unsatisfied with your magnetic tunnel junction setup, you can left-click the Restore Defaults button to start over from the default setup.

The parameters in the magnetic tunnel junction builder.

Figure 38: The parameters in the magnetic tunnel junction builder.


Magnetic Tunnel Junction Builder parameters

Electrodes

Material

The electrode materials. Choose between Fe, Co, FeCo, and CoFe in the bcc B2 phase, cleaved along [100] plane.

Lattice constant

The lattice constant of the electrodes (note, changing this value will also change the initial setting of the last layer surface separation).

Layers

The number of electrode layers.

Surface layers

Left surface

The number of layers of the left surface.

Right surface

The number of layers of the right surface.

Inner layer separation

The separation between the last surface atom (the atom closest to the insulating barrier region) and second-last surface atom. Note, the value of this parameter changes as soon as you change the lattice constant.

Electrode/Oxygen distance.

The distance between the electrode surface and the barrier region. The starting position of the barrier region is chosen as the position of the first oxygen atom(s).

Barrier

Material

The material between the two electrodes (the barrier region). Choose between MgO and ZrO.

Number of layers

The number of oxide layers in the insulating barrier region.

Buckling

This parameter off-sets the position on the outer-most metal layer in the insulating barrier with respect to the oxygen atoms.

Layer separations

The individual layer separations in the barrier region.

Global repetition

Repetition along A

The repetition of the entire system along the A axis.

Repetition along B

The repetition of the entire system along the B axis.